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IRLR3303PBF

IRLR3303PBF

For Reference Only

Part Number IRLR3303PBF
PNEDA Part # IRLR3303PBF
Description MOSFET N-CH 30V 35A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,034
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLR3303PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLR3303PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLR3303PBF, IRLR3303PBF Datasheet (Total Pages: 11, Size: 310.77 KB)
PDFIRLR3303TRRPBF Datasheet Cover
IRLR3303TRRPBF Datasheet Page 2 IRLR3303TRRPBF Datasheet Page 3 IRLR3303TRRPBF Datasheet Page 4 IRLR3303TRRPBF Datasheet Page 5 IRLR3303TRRPBF Datasheet Page 6 IRLR3303TRRPBF Datasheet Page 7 IRLR3303TRRPBF Datasheet Page 8 IRLR3303TRRPBF Datasheet Page 9 IRLR3303TRRPBF Datasheet Page 10 IRLR3303TRRPBF Datasheet Page 11

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IRLR3303PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs31mOhm @ 21A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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