IRLR3410TRLPBF
For Reference Only
| Part Number | IRLR3410TRLPBF |
| PNEDA Part # | IRLR3410TRLPBF |
| Description | MOSFET N-CH 100V 17A DPAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,768 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRLR3410TRLPBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRLR3410TRLPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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- It may take up to 24 hours before carriers display the info.
Notes
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IRLR3410TRLPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 179mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 100V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id 4.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1935pF @ 100V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D2Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
