Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLR8259PBF

IRLR8259PBF

For Reference Only

Part Number IRLR8259PBF
PNEDA Part # IRLR8259PBF
Description MOSFET N-CH 25V 57A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,538
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLR8259PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLR8259PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLR8259PBF Datasheet
  • where to find IRLR8259PBF
  • Infineon Technologies

  • Infineon Technologies IRLR8259PBF
  • IRLR8259PBF PDF Datasheet
  • IRLR8259PBF Stock

  • IRLR8259PBF Pinout
  • Datasheet IRLR8259PBF
  • IRLR8259PBF Supplier

  • Infineon Technologies Distributor
  • IRLR8259PBF Price
  • IRLR8259PBF Distributor

IRLR8259PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 13V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

DMNH6012LK3Q-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1926pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252-4L

Package / Case

TO-252-5, DPak (4 Leads + Tab), TO-252AD

AO4710

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.8mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2376pF @ 15V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Manufacturer

IXYS

Series

GigaMOS™, HiPerFET™, TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

102A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

335nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 25V

FET Feature

-

Power Dissipation (Max)

570W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

24-SMPD

Package / Case

24-PowerSMD, 21 Leads

2N7002E,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

385mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.69nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

FET Feature

-

Power Dissipation (Max)

830mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

IRFB3207PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

170A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7600pF @ 50V

FET Feature

-

Power Dissipation (Max)

330W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

MX25V1635FZNI

MX25V1635FZNI

Macronix

IC FLASH 16M SPI 80MHZ 8WSON

SHT30-ARP-B

SHT30-ARP-B

Sensirion AG

SENSOR HUMID/TEMP 5V ANLG 3% SMD

B41458B8229M000

B41458B8229M000

TDK-EPCOS

CAP ALUM 22000UF 20% 63V SCREW

MAX3645EEE+T

MAX3645EEE+T

Maxim Integrated

IC AMP LIMITING 16-QSOP

AO3407A

AO3407A

Alpha & Omega Semiconductor

MOSFET P-CH 30V 4.3A SOT23

SML-310MTT86

SML-310MTT86

Rohm Semiconductor

LED GREEN CLEAR 0603 SMD

HX5008NLT

HX5008NLT

Pulse Electronics Network

TRANSFORMER MODULE GIGABIT 1PORT

JS202011JAQN

JS202011JAQN

C&K

SWITCH SLIDE DPDT 300MA 6V

MAX17205G+T

MAX17205G+T

Maxim Integrated

IC BATTERY MULTIFUNCTION 14TDFN

ATMEGA328P-AU

ATMEGA328P-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

UCLAMP3301D.TCT

UCLAMP3301D.TCT

Semtech

TVS DIODE 3.3V 9.5V SOD323