Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLR8503TRLPBF

IRLR8503TRLPBF

For Reference Only

Part Number IRLR8503TRLPBF
PNEDA Part # IRLR8503TRLPBF
Description MOSFET N-CH 30V 44A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,066
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLR8503TRLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLR8503TRLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLR8503TRLPBF, IRLR8503TRLPBF Datasheet (Total Pages: 9, Size: 238.24 KB)
PDFIRLR8503TRLPBF Datasheet Cover
IRLR8503TRLPBF Datasheet Page 2 IRLR8503TRLPBF Datasheet Page 3 IRLR8503TRLPBF Datasheet Page 4 IRLR8503TRLPBF Datasheet Page 5 IRLR8503TRLPBF Datasheet Page 6 IRLR8503TRLPBF Datasheet Page 7 IRLR8503TRLPBF Datasheet Page 8 IRLR8503TRLPBF Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLR8503TRLPBF Datasheet
  • where to find IRLR8503TRLPBF
  • Infineon Technologies

  • Infineon Technologies IRLR8503TRLPBF
  • IRLR8503TRLPBF PDF Datasheet
  • IRLR8503TRLPBF Stock

  • IRLR8503TRLPBF Pinout
  • Datasheet IRLR8503TRLPBF
  • IRLR8503TRLPBF Supplier

  • Infineon Technologies Distributor
  • IRLR8503TRLPBF Price
  • IRLR8503TRLPBF Distributor

IRLR8503TRLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1650pF @ 25V
FET Feature-
Power Dissipation (Max)62W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

SIS438DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

880pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 27.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

CSD18514Q5AT

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

89A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2683pF @ 20V

FET Feature

-

Power Dissipation (Max)

74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (5x6)

Package / Case

8-PowerTDFN

NVHL027N65S3F

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, SuperFET® III, FRFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

27.4mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

227nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7780pF @ 400V

FET Feature

-

Power Dissipation (Max)

595W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

FDP3651U

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5522pF @ 25V

FET Feature

-

Power Dissipation (Max)

255W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IRFSL3607PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 46A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3070pF @ 50V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

TEMT1020

TEMT1020

Vishay Semiconductor Opto Division

SENSOR PHOTO 880NM TOP VIEW 2SMD

AT89C51-24AI

AT89C51-24AI

Microchip Technology

IC MCU 8BIT 4KB FLASH 44TQFP

NL17SZ14DFT2G

NL17SZ14DFT2G

ON Semiconductor

IC INVERTER SCHMITT 1CH SC88A

M29W640FB70N6E

M29W640FB70N6E

Micron Technology Inc.

IC FLASH 64M PARALLEL 48TSOP

LTM4623IY#PBF

LTM4623IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 3A

BK/HTB-42I-R

BK/HTB-42I-R

Eaton - Electronics Division

FUSE HLDR CART 250V 20A PNL MNT

MAX1953EUB+

MAX1953EUB+

Maxim Integrated

IC REG CTRLR BUCK 10UMAX

T520D337M006ATE015

T520D337M006ATE015

KEMET

CAP TANT POLY 330UF 6.3V 2917

ATMEGA328P-AU

ATMEGA328P-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

WIZ810MJ

WIZ810MJ

WIZnet

CNTRLR ETHERNET 10/100 BASE-T/TX

PESD12VS1UB,115

PESD12VS1UB,115

Nexperia

TVS DIODE 12V 35V SOD523

CM200C32768AZFT

CM200C32768AZFT

Citizen Finedevice

CRYSTAL 32.7680KHZ 12.5PF SMD