Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLZ24NSTRLPBF

IRLZ24NSTRLPBF

For Reference Only

Part Number IRLZ24NSTRLPBF
PNEDA Part # IRLZ24NSTRLPBF
Description MOSFET N-CH 55V 18A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 30,162
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLZ24NSTRLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLZ24NSTRLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLZ24NSTRLPBF, IRLZ24NSTRLPBF Datasheet (Total Pages: 10, Size: 301.3 KB)
PDFIRLZ24NSPBF Datasheet Cover
IRLZ24NSPBF Datasheet Page 2 IRLZ24NSPBF Datasheet Page 3 IRLZ24NSPBF Datasheet Page 4 IRLZ24NSPBF Datasheet Page 5 IRLZ24NSPBF Datasheet Page 6 IRLZ24NSPBF Datasheet Page 7 IRLZ24NSPBF Datasheet Page 8 IRLZ24NSPBF Datasheet Page 9 IRLZ24NSPBF Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLZ24NSTRLPBF Datasheet
  • where to find IRLZ24NSTRLPBF
  • Infineon Technologies

  • Infineon Technologies IRLZ24NSTRLPBF
  • IRLZ24NSTRLPBF PDF Datasheet
  • IRLZ24NSTRLPBF Stock

  • IRLZ24NSTRLPBF Pinout
  • Datasheet IRLZ24NSTRLPBF
  • IRLZ24NSTRLPBF Supplier

  • Infineon Technologies Distributor
  • IRLZ24NSTRLPBF Price
  • IRLZ24NSTRLPBF Distributor

IRLZ24NSTRLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs60mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds480pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

BSO080P03NS3GXUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 14.8A, 10V

Vgs(th) (Max) @ Id

3.1V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

6750pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-DSO-8

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRFS23N20DTRLP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1960pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF3707ZCLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

2.25V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1210pF @ 15V

FET Feature

-

Power Dissipation (Max)

57W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

FDS5170N7

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

10.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 10.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

71nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2889pF @ 30V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

TP5335K1-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

350V

Current - Continuous Drain (Id) @ 25°C

85mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 25V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB (SOT23)

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

H1102NLT

H1102NLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

74VHC14MTC

74VHC14MTC

ON Semiconductor

IC INVERTER SCHMITT 6CH 14TSSOP

SSM3J328R,LF

SSM3J328R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

SQJ423EP-T1_GE3

SQJ423EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 40V 55A POWERPAKSO-8

ICE3BR0665J

ICE3BR0665J

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP 8DIP

VLMS1300-GS08

VLMS1300-GS08

Vishay Semiconductor Opto Division

LED RED 0603 SMD

SP3232ECN-L

SP3232ECN-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

ES1JFL

ES1JFL

ON Semiconductor

DIODE GEN PURP 600V 1A SOD123F

ADP150AUJZ-3.3-R7

ADP150AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 150MA TSOT5

ABM8-24.000MHZ-D2-T

ABM8-24.000MHZ-D2-T

Abracon

CRYSTAL 24.0000MHZ 18PF SMD

L6374FP

L6374FP

STMicroelectronics

IC LINE DRIVER QUAD IND 20-SOIC

MAX3051ESA+T

MAX3051ESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SO