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IRLZ34NS

IRLZ34NS

For Reference Only

Part Number IRLZ34NS
PNEDA Part # IRLZ34NS
Description MOSFET N-CH 55V 30A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,676
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLZ34NS Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLZ34NS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLZ34NS, IRLZ34NS Datasheet (Total Pages: 11, Size: 185.47 KB)
PDFIRLZ34NL Datasheet Cover
IRLZ34NL Datasheet Page 2 IRLZ34NL Datasheet Page 3 IRLZ34NL Datasheet Page 4 IRLZ34NL Datasheet Page 5 IRLZ34NL Datasheet Page 6 IRLZ34NL Datasheet Page 7 IRLZ34NL Datasheet Page 8 IRLZ34NL Datasheet Page 9 IRLZ34NL Datasheet Page 10 IRLZ34NL Datasheet Page 11

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IRLZ34NS Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds880pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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