Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLZ34NSTRLPBF

IRLZ34NSTRLPBF

For Reference Only

Part Number IRLZ34NSTRLPBF
PNEDA Part # IRLZ34NSTRLPBF
Description MOSFET N-CH 55V 30A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 256,224
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLZ34NSTRLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLZ34NSTRLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLZ34NSTRLPBF Datasheet
  • where to find IRLZ34NSTRLPBF
  • Infineon Technologies

  • Infineon Technologies IRLZ34NSTRLPBF
  • IRLZ34NSTRLPBF PDF Datasheet
  • IRLZ34NSTRLPBF Stock

  • IRLZ34NSTRLPBF Pinout
  • Datasheet IRLZ34NSTRLPBF
  • IRLZ34NSTRLPBF Supplier

  • Infineon Technologies Distributor
  • IRLZ34NSTRLPBF Price
  • IRLZ34NSTRLPBF Distributor

IRLZ34NSTRLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds880pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

FDMS86202ET120

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

13.5A (Ta), 102A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

7.2mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4585pF @ 60V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 187W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power56

Package / Case

8-PowerTDFN

NTK3142PT5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

215mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

4Ohm @ 260mA, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

15.3pF @ 10V

FET Feature

-

Power Dissipation (Max)

280mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-723

Package / Case

SOT-723

IPP90R340C3XKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SI7102DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

3720pF @ 6V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 52W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

IRF3415STRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

42mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

WSL0603R1000FEA18

WSL0603R1000FEA18

Vishay Dale

RES 0.1 OHM 1% 1/5W 0603

CM1230-02CP

CM1230-02CP

ON Semiconductor

TVS DIODE 3.3V 9.8V 4WLCSP

WSL1206R0100FEA

WSL1206R0100FEA

Vishay Dale

RES 0.01 OHM 1% 1/4W 1206

MIC2025-1YM

MIC2025-1YM

Microchip Technology

IC SW DISTRIBUTION 1CHAN 8SOIC

PMBT3904VS,115

PMBT3904VS,115

Nexperia

TRANS 2NPN 40V 0.2A SOT666

SRN8040-R50Y

SRN8040-R50Y

Bourns

FIXED IND 500NH 10A 7 MOHM SMD

MBR0540T1G

MBR0540T1G

ON Semiconductor

DIODE SCHOTTKY 40V 500MA SOD123

STM32F407IGH6

STM32F407IGH6

STMicroelectronics

IC MCU 32BIT 1MB FLASH 176UBGA

TS922IDT

TS922IDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

STM32F103RCT6

STM32F103RCT6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 64LQFP

ADF4113BRU

ADF4113BRU

Analog Devices

IC SYNTH PLL RF 4.0GHZ 16-TSSOP

AOD413

AOD413

Alpha & Omega Semiconductor

MOSFET P-CH 40V 24A TO252