Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLZ44S

IRLZ44S

For Reference Only

Part Number IRLZ44S
PNEDA Part # IRLZ44S
Description MOSFET N-CH 60V 50A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,740
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLZ44S Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRLZ44S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLZ44S Datasheet
  • where to find IRLZ44S
  • Vishay Siliconix

  • Vishay Siliconix IRLZ44S
  • IRLZ44S PDF Datasheet
  • IRLZ44S Stock

  • IRLZ44S Pinout
  • Datasheet IRLZ44S
  • IRLZ44S Supplier

  • Vishay Siliconix Distributor
  • IRLZ44S Price
  • IRLZ44S Distributor

IRLZ44S Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs28mOhm @ 31A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66nC @ 5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 25V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

STP16N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

718pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IRF7807ZTR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.8mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRLR3714ZTR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.1nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 10V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

TK55D10J1(Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

55A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 27A, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5700pF @ 10V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220(W)

Package / Case

TO-220-3

IPI120N06S4H1AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

21900pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

TL1014BF160QG

TL1014BF160QG

E-Switch

SWITCH TACTILE SPST-NO 0.05A 12V

ULN2804A

ULN2804A

STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

PIC18LF1320-I/P

PIC18LF1320-I/P

Microchip Technology

IC MCU 8BIT 8KB FLASH 18DIP

LT3012EFE#PBF

LT3012EFE#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 250MA 16TSSOP

LAN8740AI-EN

LAN8740AI-EN

Microchip Technology

IC TRANSCEIVER FULL 1/1 32SQFN

BC807-16,215

BC807-16,215

Nexperia

TRANS PNP 45V 0.5A SOT23

3224W-1-202E

3224W-1-202E

Bourns

TRIMMER 2K OHM 0.25W J LEAD TOP

ADM3490ARZ

ADM3490ARZ

Analog Devices

IC TRANSCEIVER FULL 1/1 8SOIC

STBB1-APUR

STBB1-APUR

STMicroelectronics

IC REG BCK BST ADJ 1.6A 10DFN

0466005.NRHF

0466005.NRHF

Littelfuse

FUSE BOARD MNT 5A 32VAC/VDC 1206

PT61020EL

PT61020EL

Bourns

PULSE XFMR 1CT:1 350UH

06035C104KAT2A

06035C104KAT2A

CAP CER 0.1UF 50V X7R 0603