IS46R16320E-6TLA1-TR
For Reference Only
| Part Number | IS46R16320E-6TLA1-TR |
| PNEDA Part # | IS46R16320E-6TLA1-TR |
| Description | IC DRAM 512M PARALLEL 166MHZ |
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Unit Price | Request a Quote |
| In Stock | 7,506 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IS46R16320E-6TLA1-TR Resources
| Brand | ISSI, Integrated Silicon Solution Inc |
| ECAD Module |
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| Mfr. Part Number | IS46R16320E-6TLA1-TR |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IS46R16320E-6TLA1-TR Specifications
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Series | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 700ps |
| Voltage - Supply | 2.3V ~ 2.7V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 66-TSSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 66-TSOP II |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR Memory Size 512Mb (64M x 8) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page 15ns Access Time 700ps Voltage - Supply 2.3V ~ 2.7V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 60-TFBGA Supplier Device Package 60-TFBGA (8x13) |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mb (64K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 20ns Access Time 20ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 44-TSOP (0.400", 10.16mm Width) Supplier Device Package 44-TSOP II |
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Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 36Mb (1M x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.2ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
