IS64WV5128EDBLL-10CTLA3
For Reference Only
| Part Number | IS64WV5128EDBLL-10CTLA3 |
| PNEDA Part # | IS64WV5128EDBLL-10CTLA3 |
| Description | IC SRAM 4M PARALLEL 44TSOP II |
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Unit Price | Request a Quote |
| In Stock | 5,346 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 24 - May 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IS64WV5128EDBLL-10CTLA3 Resources
| Brand | ISSI, Integrated Silicon Solution Inc |
| ECAD Module |
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| Mfr. Part Number | IS64WV5128EDBLL-10CTLA3 |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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Prompt Responsiveness
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IS64WV5128EDBLL-10CTLA3 Specifications
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 4Mb (512K x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10ns |
| Voltage - Supply | 2.4V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
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