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ISL9N302AS3ST

ISL9N302AS3ST

For Reference Only

Part Number ISL9N302AS3ST
PNEDA Part # ISL9N302AS3ST
Description MOSFET N-CH 30V 75A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,912
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ISL9N302AS3ST Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberISL9N302AS3ST
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ISL9N302AS3ST, ISL9N302AS3ST Datasheet (Total Pages: 11, Size: 253.25 KB)
PDFISL9N302AS3ST Datasheet Cover
ISL9N302AS3ST Datasheet Page 2 ISL9N302AS3ST Datasheet Page 3 ISL9N302AS3ST Datasheet Page 4 ISL9N302AS3ST Datasheet Page 5 ISL9N302AS3ST Datasheet Page 6 ISL9N302AS3ST Datasheet Page 7 ISL9N302AS3ST Datasheet Page 8 ISL9N302AS3ST Datasheet Page 9 ISL9N302AS3ST Datasheet Page 10 ISL9N302AS3ST Datasheet Page 11

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ISL9N302AS3ST Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11000pF @ 15V
FET Feature-
Power Dissipation (Max)345W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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