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ISL9R8120S3ST

ISL9R8120S3ST

For Reference Only

Part Number ISL9R8120S3ST
PNEDA Part # ISL9R8120S3ST
Description DIODE GEN PURP 1.2KV 8A TO263
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,808
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ISL9R8120S3ST Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberISL9R8120S3ST
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
ISL9R8120S3ST, ISL9R8120S3ST Datasheet (Total Pages: 6, Size: 145.31 KB)
PDFISL9R8120S3ST Datasheet Cover
ISL9R8120S3ST Datasheet Page 2 ISL9R8120S3ST Datasheet Page 3 ISL9R8120S3ST Datasheet Page 4 ISL9R8120S3ST Datasheet Page 5 ISL9R8120S3ST Datasheet Page 6

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ISL9R8120S3ST Specifications

ManufacturerON Semiconductor
SeriesStealth™
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1200V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If3.3V @ 8A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)300ns
Current - Reverse Leakage @ Vr100µA @ 1200V
Capacitance @ Vr, F30pF @ 10V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB
Operating Temperature - Junction-55°C ~ 150°C

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