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IXBF10N300C

IXBF10N300C

For Reference Only

Part Number IXBF10N300C
PNEDA Part # IXBF10N300C
Description IGBT 3000V 29A 240W ISOPLUSI4
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,880
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBF10N300C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBF10N300C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBF10N300C, IXBF10N300C Datasheet (Total Pages: 6, Size: 220.88 KB)
PDFIXBF10N300C Datasheet Cover
IXBF10N300C Datasheet Page 2 IXBF10N300C Datasheet Page 3 IXBF10N300C Datasheet Page 4 IXBF10N300C Datasheet Page 5 IXBF10N300C Datasheet Page 6

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IXBF10N300C Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)3000V
Current - Collector (Ic) (Max)29A
Current - Collector Pulsed (Icm)240A
Vce(on) (Max) @ Vge, Ic6V @ 15V, 10A
Power - Max240W
Switching Energy7.2mJ (on), 1.04mJ (off)
Input TypeStandard
Gate Charge208nC
Td (on/off) @ 25°C32ns/390ns
Test Condition1500V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)700ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Casei4-Pac™-5 (3 Leads)
Supplier Device PackageISOPLUS i4-PAC™

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Gate Charge

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Test Condition

600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.65mJ (on), 1.7mJ (off)

Input Type

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Gate Charge

47nC

Td (on/off) @ 25°C

-

Test Condition

600V, 15A, 56Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.2mJ (on), 1.4mJ (off)

Input Type

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Gate Charge

310nC

Td (on/off) @ 25°C

26ns/299ns

Test Condition

400V, 50A, 7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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