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IXBH16N170

IXBH16N170

For Reference Only

Part Number IXBH16N170
PNEDA Part # IXBH16N170
Description IGBT 1700V 40A 250W TO247AD
Manufacturer IXYS
Unit Price
1 ---------- $140.5897
50 ---------- $133.9996
100 ---------- $127.4094
200 ---------- $120.8193
400 ---------- $115.3275
500 ---------- $109.8357
In Stock 272
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBH16N170 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBH16N170
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBH16N170, IXBH16N170 Datasheet (Total Pages: 5, Size: 176.44 KB)
PDFIXBH16N170 Datasheet Cover
IXBH16N170 Datasheet Page 2 IXBH16N170 Datasheet Page 3 IXBH16N170 Datasheet Page 4 IXBH16N170 Datasheet Page 5

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IXBH16N170 Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 16A
Power - Max250W
Switching Energy-
Input TypeStandard
Gate Charge72nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)1.32µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXBH)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

100ns/237ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

1.7µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

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Power - Max

38W

Switching Energy

310µJ (on), 3.28mJ (off)

Input Type

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Gate Charge

15nC

Td (on/off) @ 25°C

76ns/815ns

Test Condition

480V, 8A, 100Ohm, 15V

Reverse Recovery Time (trr)

28ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

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Diodes Incorporated

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

770µJ (on), 550µJ (off)

Input Type

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Gate Charge

287nC

Td (on/off) @ 25°C

58ns/328ns

Test Condition

400V, 50A, 7.9Ohm, 15V

Reverse Recovery Time (trr)

80ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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