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IXBX55N300

IXBX55N300

For Reference Only

Part Number IXBX55N300
PNEDA Part # IXBX55N300
Description IGBT 3000V 130A 625W PLUS247
Manufacturer IXYS
Unit Price
1 ---------- $837.1636
50 ---------- $797.9216
100 ---------- $758.6796
200 ---------- $719.4375
400 ---------- $686.7358
500 ---------- $654.0341
In Stock 2,277
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBX55N300 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBX55N300
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBX55N300, IXBX55N300 Datasheet (Total Pages: 6, Size: 215.9 KB)
PDFIXBK55N300 Datasheet Cover
IXBK55N300 Datasheet Page 2 IXBK55N300 Datasheet Page 3 IXBK55N300 Datasheet Page 4 IXBK55N300 Datasheet Page 5 IXBK55N300 Datasheet Page 6

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IXBX55N300 Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)3000V
Current - Collector (Ic) (Max)130A
Current - Collector Pulsed (Icm)600A
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 55A
Power - Max625W
Switching Energy-
Input TypeStandard
Gate Charge335nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)1.9µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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