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IXCY01N90E

IXCY01N90E

For Reference Only

Part Number IXCY01N90E
PNEDA Part # IXCY01N90E
Description MOSFET N-CH 900V 0.25A TO-252
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXCY01N90E Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXCY01N90E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXCY01N90E, IXCY01N90E Datasheet (Total Pages: 3, Size: 115.44 KB)
PDFIXCY01N90E Datasheet Cover
IXCY01N90E Datasheet Page 2 IXCY01N90E Datasheet Page 3

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IXCY01N90E Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds133pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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