IXDN609SITR
For Reference Only
| Part Number | IXDN609SITR |
| PNEDA Part # | IXDN609SITR |
| Description | IC GATE DVR 9A NON-INV 8SOIC |
| Manufacturer | IXYS Integrated Circuits Division |
| Unit Price | Request a Quote |
| In Stock | 58,356 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXDN609SITR Resources
| Brand | IXYS Integrated Circuits Division |
| ECAD Module |
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| Mfr. Part Number | IXDN609SITR |
| Category | Semiconductors › Power Management ICs › PMIC - Gate Drivers |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IXDN609SITR Specifications
| Manufacturer | IXYS Integrated Circuits Division |
| Series | - |
| Driven Configuration | Low-Side |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| Voltage - Supply | 4.5V ~ 35V |
| Logic Voltage - VIL, VIH | 0.8V, 3V |
| Current - Peak Output (Source, Sink) | 9A, 9A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | - |
| Rise / Fall Time (Typ) | 22ns, 15ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Supplier Device Package | 8-SOIC-EP |
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Manufacturer Infineon Technologies Series - Driven Configuration Low-Side Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 6V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.7V Current - Peak Output (Source, Sink) 2.3A, 3.3A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 15ns, 10ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
Manufacturer Renesas Electronics America Inc. Series - Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type N-Channel MOSFET Voltage - Supply 4.5V ~ 5.5V Logic Voltage - VIL, VIH 1.8V, 3.1V Current - Peak Output (Source, Sink) 2A, 2A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 33V Rise / Fall Time (Typ) 8ns, 8ns Operating Temperature -10°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Renesas Electronics America Inc. Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type N-Channel MOSFET Voltage - Supply 9V ~ 14V Logic Voltage - VIL, VIH 3.7V, 7.4V Current - Peak Output (Source, Sink) 1.25A, 1.25A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 100V Rise / Fall Time (Typ) 16ns, 16ns Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
