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IXE611S1T/R

IXE611S1T/R

For Reference Only

Part Number IXE611S1T/R
PNEDA Part # IXE611S1T-R
Description IC DRIVER MOSF/IGBT HALF 8-SOIC
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,658
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXE611S1T/R Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXE611S1T/R
CategorySemiconductorsPower Management ICsPMIC - Gate Drivers

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IXE611S1T/R Specifications

ManufacturerIXYS
Series-
Driven Configuration-
Channel Type-
Number of Drivers-
Gate Type-
Voltage - Supply-
Logic Voltage - VIL, VIH-
Current - Peak Output (Source, Sink)-
Input Type-
High Side Voltage - Max (Bootstrap)-
Rise / Fall Time (Typ)-
Operating Temperature-
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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Driven Configuration

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Voltage - Supply

4.5V ~ 16V

Logic Voltage - VIL, VIH

0.8V, 2V

Current - Peak Output (Source, Sink)

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Input Type

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Rise / Fall Time (Typ)

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Voltage - Supply

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Logic Voltage - VIL, VIH

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Current - Peak Output (Source, Sink)

4A, 4A

Input Type

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High Side Voltage - Max (Bootstrap)

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Rise / Fall Time (Typ)

40ns, 25ns

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MIC5021BN

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Manufacturer

Microchip Technology

Series

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Driven Configuration

High-Side

Channel Type

Single

Number of Drivers

1

Gate Type

IGBT, N-Channel MOSFET

Voltage - Supply

12V ~ 36V

Logic Voltage - VIL, VIH

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Current - Peak Output (Source, Sink)

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Current - Peak Output (Source, Sink)

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Channel Type

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Number of Drivers

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Logic Voltage - VIL, VIH

1.1V, 2.7V

Current - Peak Output (Source, Sink)

9A, 9A

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High Side Voltage - Max (Bootstrap)

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Rise / Fall Time (Typ)

20ns, 20ns

Operating Temperature

0°C ~ 70°C (TA)

Mounting Type

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Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

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