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IXFA180N10T2

IXFA180N10T2

For Reference Only

Part Number IXFA180N10T2
PNEDA Part # IXFA180N10T2
Description MOSFET N-CH 100V 180A TO-263AA
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,564
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFA180N10T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFA180N10T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFA180N10T2, IXFA180N10T2 Datasheet (Total Pages: 6, Size: 208.18 KB)
PDFIXFA180N10T2 Datasheet Cover
IXFA180N10T2 Datasheet Page 2 IXFA180N10T2 Datasheet Page 3 IXFA180N10T2 Datasheet Page 4 IXFA180N10T2 Datasheet Page 5 IXFA180N10T2 Datasheet Page 6

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IXFA180N10T2 Specifications

ManufacturerIXYS
SeriesGigaMOS™, HiPerFET™, TrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs185nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10500pF @ 25V
FET Feature-
Power Dissipation (Max)480W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXFA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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