Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFA5N50P3

IXFA5N50P3

For Reference Only

Part Number IXFA5N50P3
PNEDA Part # IXFA5N50P3
Description MOSFET N-CH 500V 5A TO-263AA
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFA5N50P3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFA5N50P3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFA5N50P3 Datasheet
  • where to find IXFA5N50P3
  • IXYS

  • IXYS IXFA5N50P3
  • IXFA5N50P3 PDF Datasheet
  • IXFA5N50P3 Stock

  • IXFA5N50P3 Pinout
  • Datasheet IXFA5N50P3
  • IXFA5N50P3 Supplier

  • IXYS Distributor
  • IXFA5N50P3 Price
  • IXFA5N50P3 Distributor

IXFA5N50P3 Specifications

ManufacturerIXYS
SeriesHiPerFET™, Polar3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.65Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6.9nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds370pF @ 25V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXFA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

NTP22N06L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

22A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

65mOhm @ 11A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

690pF @ 25V

FET Feature

-

Power Dissipation (Max)

60W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

DMTH10H010LPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.8A (Ta), 98.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.6mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2592pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.5W, 125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

FDP032N08B-F102

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

144nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10965pF @ 40V

FET Feature

-

Power Dissipation (Max)

263W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IRFU4104PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

89nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

250A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9900pF @ 25V

FET Feature

-

Power Dissipation (Max)

550W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

Recently Sold

LTM4623IY#PBF

LTM4623IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 3A

MCIMX6G1CVM05AA

MCIMX6G1CVM05AA

NXP

IC MPU I.MC6UL 528MHZ 289BGA

SRU8043-100Y

SRU8043-100Y

Bourns

FIXED IND 10UH 3.5A 30 MOHM SMD

STPS0520Z

STPS0520Z

STMicroelectronics

DIODE SCHOTTKY 20V 500MA SOD123

CRM2512-JW-103ELF

CRM2512-JW-103ELF

Bourns

RES SMD 10K OHM 5% 2W 2512

B560CQ-13-F

B560CQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

TS4984IQT

TS4984IQT

STMicroelectronics

IC AMP AUDIO PWR 1.2W AB 16TQFN

AD8250ARMZ-RL

AD8250ARMZ-RL

Analog Devices

IC INST AMP 1 CIRCUIT 10MSOP

HCM0703-4R7-R

HCM0703-4R7-R

Eaton - Electronics Division

FIXED IND 4.7UH 5.5A 40 MOHM SMD

UC3842BN

UC3842BN

ON Semiconductor

IC REG CTRLR BST FLYBK ISO 8-DIP

PIC16LF877A-I/L

PIC16LF877A-I/L

Microchip Technology

IC MCU 8BIT 14KB FLASH 44PLCC

FNM-30

FNM-30

Eaton - Bussmann Electrical Division

FUSE CARTRIDGE 30A 250VAC 5AG