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IXFB30N120P

IXFB30N120P

For Reference Only

Part Number IXFB30N120P
PNEDA Part # IXFB30N120P
Description MOSFET N-CH 1200V 30A PLUS264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,914
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFB30N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFB30N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFB30N120P, IXFB30N120P Datasheet (Total Pages: 5, Size: 142.32 KB)
PDFIXFB30N120P Datasheet Cover
IXFB30N120P Datasheet Page 2 IXFB30N120P Datasheet Page 3 IXFB30N120P Datasheet Page 4 IXFB30N120P Datasheet Page 5

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IXFB30N120P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs310nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds22500pF @ 25V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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