IXFB40N110Q3
For Reference Only
| Part Number | IXFB40N110Q3 |
| PNEDA Part # | IXFB40N110Q3 |
| Description | MOSFET N-CH 1100V 40A PLUS264 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 7,920 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 22 - Jun 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXFB40N110Q3 Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXFB40N110Q3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFB40N110Q3 Datasheet
- where to find IXFB40N110Q3
- IXYS
- IXYS IXFB40N110Q3
- IXFB40N110Q3 PDF Datasheet
- IXFB40N110Q3 Stock
- IXFB40N110Q3 Pinout
- Datasheet IXFB40N110Q3
- IXFB40N110Q3 Supplier
- IXYS Distributor
- IXFB40N110Q3 Price
- IXFB40N110Q3 Distributor
IXFB40N110Q3 Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1100V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1560W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS264™ |
| Package / Case | TO-264-3, TO-264AA |
The Products You May Be Interested In
|
Manufacturer STMicroelectronics Series STripFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.8mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 965pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerFlat™ (5x6) Package / Case 8-PowerVDFN |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1500V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm @ 10A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 25V FET Feature - Power Dissipation (Max) 1250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7mOhm @ 9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1155pF @ 15V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 (Type UX) Package / Case 8-PowerVDFN |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 299mOhm @ 7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 50V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 85mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V FET Feature - Power Dissipation (Max) 800mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TUMT3 Package / Case 3-SMD, Flat Leads |
