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IXFB50N80Q2

IXFB50N80Q2

For Reference Only

Part Number IXFB50N80Q2
PNEDA Part # IXFB50N80Q2
Description MOSFET N-CH 800V 50A PLUS264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,210
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFB50N80Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFB50N80Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFB50N80Q2, IXFB50N80Q2 Datasheet (Total Pages: 4, Size: 222.97 KB)
PDFIXFB50N80Q2 Datasheet Cover
IXFB50N80Q2 Datasheet Page 2 IXFB50N80Q2 Datasheet Page 3 IXFB50N80Q2 Datasheet Page 4

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IXFB50N80Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs160mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7200pF @ 25V
FET Feature-
Power Dissipation (Max)1135W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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