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IXFB62N80Q3

IXFB62N80Q3

For Reference Only

Part Number IXFB62N80Q3
PNEDA Part # IXFB62N80Q3
Description MOSFET N-CH 800V 62A PLUS264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,002
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFB62N80Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFB62N80Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFB62N80Q3, IXFB62N80Q3 Datasheet (Total Pages: 5, Size: 144.06 KB)
PDFIXFB62N80Q3 Datasheet Cover
IXFB62N80Q3 Datasheet Page 2 IXFB62N80Q3 Datasheet Page 3 IXFB62N80Q3 Datasheet Page 4 IXFB62N80Q3 Datasheet Page 5

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IXFB62N80Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs140mOhm @ 31A, 10V
Vgs(th) (Max) @ Id6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13600pF @ 25V
FET Feature-
Power Dissipation (Max)1560W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Drive Voltage (Max Rds On, Min Rds On)

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