Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFB72N55Q2

IXFB72N55Q2

For Reference Only

Part Number IXFB72N55Q2
PNEDA Part # IXFB72N55Q2
Description MOSFET N-CH 550V 72A PLUS264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,024
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFB72N55Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFB72N55Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFB72N55Q2, IXFB72N55Q2 Datasheet (Total Pages: 4, Size: 551.38 KB)
PDFIXFB72N55Q2 Datasheet Cover
IXFB72N55Q2 Datasheet Page 2 IXFB72N55Q2 Datasheet Page 3 IXFB72N55Q2 Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFB72N55Q2 Datasheet
  • where to find IXFB72N55Q2
  • IXYS

  • IXYS IXFB72N55Q2
  • IXFB72N55Q2 PDF Datasheet
  • IXFB72N55Q2 Stock

  • IXFB72N55Q2 Pinout
  • Datasheet IXFB72N55Q2
  • IXFB72N55Q2 Supplier

  • IXYS Distributor
  • IXFB72N55Q2 Price
  • IXFB72N55Q2 Distributor

IXFB72N55Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs72mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs258nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds10500pF @ 25V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

The Products You May Be Interested In

Manufacturer

IXYS

Series

GigaMOS™, HiPerFET™, TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

334A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

670nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4700pF @ 10V

FET Feature

-

Power Dissipation (Max)

680W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

24-SMPD

Package / Case

24-PowerSMD, 21 Leads

NTMFD4951NFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRFD120

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 780mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

360pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

DMT5015LFDF-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

9.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

902.7pF @ 25V

FET Feature

-

Power Dissipation (Max)

820mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-UDFN2020 (2x2)

Package / Case

6-UDFN Exposed Pad

IRLZ34S

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

50mOhm @ 18A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

CY8C24123A-24SXI

CY8C24123A-24SXI

Cypress Semiconductor

IC MCU 8BIT 4KB FLASH 8SOIC

BC184C

BC184C

ON Semiconductor

TRANS NPN 30V 0.5A TO-92

2N7002LT1G

2N7002LT1G

ON Semiconductor

MOSFET N-CH 60V 0.115A SOT-23

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

CM200C32768AZFT

CM200C32768AZFT

Citizen Finedevice

CRYSTAL 32.7680KHZ 12.5PF SMD

SC2596SETRT

SC2596SETRT

Semtech

IC REG LDO DDR 1OUT 8SOIC

G5LE-14 DC12

G5LE-14 DC12

Omron Electronics Inc-EMC Div

RELAY GEN PURPOSE SPDT 10A 12V

LT1963AEFE-3.3#TRPBF

LT1963AEFE-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A 16TSSOP

3296W-1-203LF

3296W-1-203LF

Bourns

TRIMMER 20K OHM 0.5W PC PIN TOP

CLF7045T-2R2N

CLF7045T-2R2N

TDK

FIXED IND 2.2UH 4.3A 14.6 MOHM

ST1S40IPUR

ST1S40IPUR

STMicroelectronics

IC REG BUCK ADJ 3A 8VFQFPN

MT40A512M16LY-075:E

MT40A512M16LY-075:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ