Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFE23N100

IXFE23N100

For Reference Only

Part Number IXFE23N100
PNEDA Part # IXFE23N100
Description MOSFET N-CH 1000V 21A ISOPLUS227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,862
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFE23N100 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFE23N100
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFE23N100, IXFE23N100 Datasheet (Total Pages: 2, Size: 923.25 KB)
PDFIXFE24N100 Datasheet Cover
IXFE24N100 Datasheet Page 2

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFE23N100 Datasheet
  • where to find IXFE23N100
  • IXYS

  • IXYS IXFE23N100
  • IXFE23N100 PDF Datasheet
  • IXFE23N100 Stock

  • IXFE23N100 Pinout
  • Datasheet IXFE23N100
  • IXFE23N100 Supplier

  • IXYS Distributor
  • IXFE23N100 Price
  • IXFE23N100 Distributor

IXFE23N100 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7000pF @ 25V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

DMNH4005SCTQ

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

2846pF @ 20V

FET Feature

-

Power Dissipation (Max)

165W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IXFN44N80

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

380nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10000pF @ 25V

FET Feature

-

Power Dissipation (Max)

700W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

IPD200N15N3GBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1820pF @ 75V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

ZXMP10A17E6TA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

350mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

424pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-26

Package / Case

SOT-23-6

STP150N3LLH6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4040pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

0251007.NRT1L

0251007.NRT1L

Littelfuse

FUSE BRD MNT 7A 125VAC/VDC AXIAL

CS5173EDR8G

CS5173EDR8G

ON Semiconductor

IC REG MULT CONFG ADJ 1.5A 8SOIC

AD8032ARZ-REEL7

AD8032ARZ-REEL7

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

AD8032ARMZ

AD8032ARMZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8MSOP

ADM3222ARSZ

ADM3222ARSZ

Analog Devices

IC TRANSCEIVER FULL 2/2 20SSOP

4608X-102-471LF

4608X-102-471LF

Bourns

RES ARRAY 4 RES 470 OHM 8SIP

MAX9910EXK+T

MAX9910EXK+T

Maxim Integrated

IC OPAMP GP 1 CIRCUIT SC70-5

YC324-JK-071KL

YC324-JK-071KL

Yageo

RES ARRAY 4 RES 1K OHM 2012

LNBH25LSPQR

LNBH25LSPQR

STMicroelectronics

IC REG CONV SAT TV 1OUT 24QFN

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

SMBJ30A

SMBJ30A

Littelfuse

TVS DIODE 30V 48.4V DO214AA