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IXFH12N100P

IXFH12N100P

For Reference Only

Part Number IXFH12N100P
PNEDA Part # IXFH12N100P
Description MOSFET N-CH 1000V 12A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH12N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH12N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH12N100P, IXFH12N100P Datasheet (Total Pages: 4, Size: 175.55 KB)
PDFIXFH12N100P Datasheet Cover
IXFH12N100P Datasheet Page 2 IXFH12N100P Datasheet Page 3 IXFH12N100P Datasheet Page 4

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IXFH12N100P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4080pF @ 25V
FET Feature-
Power Dissipation (Max)463W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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