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IXFH12N50F

IXFH12N50F

For Reference Only

Part Number IXFH12N50F
PNEDA Part # IXFH12N50F
Description MOSFET N-CH 500V 12A TO247
Manufacturer IXYS-RF
Unit Price Request a Quote
In Stock 5,112
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH12N50F Resources

Brand IXYS-RF
ECAD Module ECAD
Mfr. Part NumberIXFH12N50F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH12N50F, IXFH12N50F Datasheet (Total Pages: 2, Size: 107.22 KB)
PDFIXFT12N100F Datasheet Cover
IXFT12N100F Datasheet Page 2

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IXFH12N50F Specifications

ManufacturerIXYS-RF
SeriesHiPerRF™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1870pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXFH)
Package / CaseTO-247-3

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