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IXFH16N120P

IXFH16N120P

For Reference Only

Part Number IXFH16N120P
PNEDA Part # IXFH16N120P
Description MOSFET N-CH 1200V 16A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 12,516
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH16N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH16N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH16N120P, IXFH16N120P Datasheet (Total Pages: 5, Size: 127.82 KB)
PDFIXFT16N120P Datasheet Cover
IXFT16N120P Datasheet Page 2 IXFT16N120P Datasheet Page 3 IXFT16N120P Datasheet Page 4 IXFT16N120P Datasheet Page 5

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IXFH16N120P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 8A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6900pF @ 25V
FET Feature-
Power Dissipation (Max)660W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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