IXFH26N100X
For Reference Only
| Part Number | IXFH26N100X |
| PNEDA Part # | IXFH26N100X |
| Description | MOSFET 1KV 26A ULTRA JCT TO247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 5,256 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXFH26N100X Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXFH26N100X |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFH26N100X Datasheet
- where to find IXFH26N100X
- IXYS
- IXYS IXFH26N100X
- IXFH26N100X PDF Datasheet
- IXFH26N100X Stock
- IXFH26N100X Pinout
- Datasheet IXFH26N100X
- IXFH26N100X Supplier
- IXYS Distributor
- IXFH26N100X Price
- IXFH26N100X Distributor
IXFH26N100X Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 6V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 113nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 860W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 169mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 172pF @ 10V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-CPH Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.9mOhm @ 32A, 4.5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6550pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta), 83W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HVSON (5.4x5.15) Package / Case 8-PowerVDFN |
Manufacturer Series NexFET™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 5.7mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 4.5V Vgs (Max) -6V Input Capacitance (Ciss) (Max) @ Vds 2275pF @ 4V FET Feature - Power Dissipation (Max) 1.7W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 9-DSBGA (1.5x1.5) Package / Case 9-UFBGA, DSBGA |
Manufacturer Rohm Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LPTS Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
