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IXFH30N50Q3

IXFH30N50Q3

For Reference Only

Part Number IXFH30N50Q3
PNEDA Part # IXFH30N50Q3
Description MOSFET N-CH 500V 30A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH30N50Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH30N50Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH30N50Q3, IXFH30N50Q3 Datasheet (Total Pages: 5, Size: 132.89 KB)
PDFIXFT30N50Q3 Datasheet Cover
IXFT30N50Q3 Datasheet Page 2 IXFT30N50Q3 Datasheet Page 3 IXFT30N50Q3 Datasheet Page 4 IXFT30N50Q3 Datasheet Page 5

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IXFH30N50Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3200pF @ 25V
FET Feature-
Power Dissipation (Max)690W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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