Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFH32N48Q

IXFH32N48Q

For Reference Only

Part Number IXFH32N48Q
PNEDA Part # IXFH32N48Q
Description MOSFET N-CH 480V 32A TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,326
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH32N48Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH32N48Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFH32N48Q Datasheet
  • where to find IXFH32N48Q
  • IXYS

  • IXYS IXFH32N48Q
  • IXFH32N48Q PDF Datasheet
  • IXFH32N48Q Stock

  • IXFH32N48Q Pinout
  • Datasheet IXFH32N48Q
  • IXFH32N48Q Supplier

  • IXYS Distributor
  • IXFH32N48Q Price
  • IXFH32N48Q Distributor

IXFH32N48Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)480V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 25V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

The Products You May Be Interested In

AON7400B

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1440pF @ 15V

FET Feature

-

Power Dissipation (Max)

4.1W (Ta), 24W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (3x3)

Package / Case

8-PowerVDFN

DMNH10H028SPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

28mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2245pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3260pF @ 25V

FET Feature

-

Power Dissipation (Max)

695W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

RYE002N05TCL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0.9V, 4.5V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

800mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

26pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

EMT3

Package / Case

SC-75, SOT-416

IPP05N03LB G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.3mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3209pF @ 15V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

ZLLS400TA

ZLLS400TA

Diodes Incorporated

DIODE SCHOTTKY 40V 520MA SOD323

ISL97900CRZ-T7A

ISL97900CRZ-T7A

Renesas Electronics America Inc.

IC LED DRIVER RGLTR DIM 28QFN

MCP73832T-2ATI/OT

MCP73832T-2ATI/OT

Microchip Technology

IC LI-ION/LI-POLY CTRLR SOT23-5

3314J-1-203E

3314J-1-203E

Bourns

TRIMMER 20K OHM 0.25W J LEAD TOP

IXBT12N300HV

IXBT12N300HV

IXYS

IGBT 3000V 30A 160W TO268

FP3-R47-R

FP3-R47-R

Eaton - Electronics Division

FIXED IND 470NH 10.9A 3.67 MOHM

MT40A256M16GE-083E IT:B

MT40A256M16GE-083E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

NE5534AN

NE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP

IXFK90N20

IXFK90N20

IXYS

MOSFET N-CH 200V 90A TO-264AA

74HC164D

74HC164D

Toshiba Semiconductor and Storage

IC SHIFT REGISTER 8BIT 14SOP

SBR3U60P1-7

SBR3U60P1-7

Diodes Incorporated

DIODE SBR 60V 3A POWERDI123

CDRH124NP-100MC

CDRH124NP-100MC

Sumida

FIXED IND 10UH 4.5A 28 MOHM SMD