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IXFH36N55Q2

IXFH36N55Q2

For Reference Only

Part Number IXFH36N55Q2
PNEDA Part # IXFH36N55Q2
Description MOSFET N-CH 550V 36A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,724
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 22 - Jun 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH36N55Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH36N55Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH36N55Q2, IXFH36N55Q2 Datasheet (Total Pages: 5, Size: 556.62 KB)
PDFIXFH36N55Q2 Datasheet Cover
IXFH36N55Q2 Datasheet Page 2 IXFH36N55Q2 Datasheet Page 3 IXFH36N55Q2 Datasheet Page 4 IXFH36N55Q2 Datasheet Page 5

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IXFH36N55Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4100pF @ 25V
FET Feature-
Power Dissipation (Max)560W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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