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IXFH6N100

IXFH6N100

For Reference Only

Part Number IXFH6N100
PNEDA Part # IXFH6N100
Description MOSFET N-CH 1KV 6A TO-247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 15,072
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH6N100 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH6N100
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH6N100, IXFH6N100 Datasheet (Total Pages: 4, Size: 77.8 KB)
PDFIXFH6N90 Datasheet Cover
IXFH6N90 Datasheet Page 2 IXFH6N90 Datasheet Page 3 IXFH6N90 Datasheet Page 4

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IXFH6N100 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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