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IXFH80N10

IXFH80N10

For Reference Only

Part Number IXFH80N10
PNEDA Part # IXFH80N10
Description MOSFET N-CH 100V 80A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH80N10 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH80N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH80N10, IXFH80N10 Datasheet (Total Pages: 2, Size: 90.86 KB)
PDFIXFH80N10 Datasheet Cover
IXFH80N10 Datasheet Page 2

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IXFH80N10 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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