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IXFH80N65X2-4

IXFH80N65X2-4

For Reference Only

Part Number IXFH80N65X2-4
PNEDA Part # IXFH80N65X2-4
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,002
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH80N65X2-4 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH80N65X2-4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXFH80N65X2-4 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs38mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8300pF @ 25V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

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