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IXFH9N80

IXFH9N80

For Reference Only

Part Number IXFH9N80
PNEDA Part # IXFH9N80
Description MOSFET N-CH 800V 9A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,180
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH9N80 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH9N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH9N80, IXFH9N80 Datasheet (Total Pages: 4, Size: 206.21 KB)
PDFIXFH8N80 Datasheet Cover
IXFH8N80 Datasheet Page 2 IXFH8N80 Datasheet Page 3 IXFH8N80 Datasheet Page 4

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IXFH9N80 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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