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IXFJ32N50Q

IXFJ32N50Q

For Reference Only

Part Number IXFJ32N50Q
PNEDA Part # IXFJ32N50Q
Description MOSFET N-CH 500V 32A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,822
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFJ32N50Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFJ32N50Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFJ32N50Q, IXFJ32N50Q Datasheet (Total Pages: 4, Size: 90.21 KB)
PDFIXFJ32N50Q Datasheet Cover
IXFJ32N50Q Datasheet Page 2 IXFJ32N50Q Datasheet Page 3 IXFJ32N50Q Datasheet Page 4

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IXFJ32N50Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs153nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3950pF @ 25V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-268
Package / CaseTO-220-3, Short Tab

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