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IXFK120N30T

IXFK120N30T

For Reference Only

Part Number IXFK120N30T
PNEDA Part # IXFK120N30T
Description MOSFET N-CH 300V 120A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,982
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFK120N30T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFK120N30T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFK120N30T, IXFK120N30T Datasheet (Total Pages: 5, Size: 139.2 KB)
PDFIXFK120N30T Datasheet Cover
IXFK120N30T Datasheet Page 2 IXFK120N30T Datasheet Page 3 IXFK120N30T Datasheet Page 4 IXFK120N30T Datasheet Page 5

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IXFK120N30T Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs265nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20000pF @ 25V
FET Feature-
Power Dissipation (Max)960W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264AA (IXFK)
Package / CaseTO-264-3, TO-264AA

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