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IXFK170N10P

IXFK170N10P

For Reference Only

Part Number IXFK170N10P
PNEDA Part # IXFK170N10P
Description MOSFET N-CH 100V 170A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,174
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFK170N10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFK170N10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFK170N10P, IXFK170N10P Datasheet (Total Pages: 5, Size: 141.04 KB)
PDFIXFK170N10P Datasheet Cover
IXFK170N10P Datasheet Page 2 IXFK170N10P Datasheet Page 3 IXFK170N10P Datasheet Page 4 IXFK170N10P Datasheet Page 5

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IXFK170N10P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs198nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)715W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264AA (IXFK)
Package / CaseTO-264-3, TO-264AA

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