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IXFK180N25T

IXFK180N25T

For Reference Only

Part Number IXFK180N25T
PNEDA Part # IXFK180N25T
Description MOSFET N-CH 250V 180A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 15,018
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFK180N25T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFK180N25T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFK180N25T, IXFK180N25T Datasheet (Total Pages: 6, Size: 171.48 KB)
PDFIXFX180N25T Datasheet Cover
IXFX180N25T Datasheet Page 2 IXFX180N25T Datasheet Page 3 IXFX180N25T Datasheet Page 4 IXFX180N25T Datasheet Page 5 IXFX180N25T Datasheet Page 6

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IXFK180N25T Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs345nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds28000pF @ 25V
FET Feature-
Power Dissipation (Max)1390W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264AA (IXFK)
Package / CaseTO-264-3, TO-264AA

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