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IXFK30N100Q2

IXFK30N100Q2

For Reference Only

Part Number IXFK30N100Q2
PNEDA Part # IXFK30N100Q2
Description MOSFET N-CH 1000V 30A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,006
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFK30N100Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFK30N100Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFK30N100Q2, IXFK30N100Q2 Datasheet (Total Pages: 4, Size: 576.83 KB)
PDFIXFK30N100Q2 Datasheet Cover
IXFK30N100Q2 Datasheet Page 2 IXFK30N100Q2 Datasheet Page 3 IXFK30N100Q2 Datasheet Page 4

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IXFK30N100Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs186nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8200pF @ 25V
FET Feature-
Power Dissipation (Max)735W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264AA (IXFK)
Package / CaseTO-264-3, TO-264AA

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