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IXFL30N120P

IXFL30N120P

For Reference Only

Part Number IXFL30N120P
PNEDA Part # IXFL30N120P
Description MOSFET N-CH 1200V 18A I5-PAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,600
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFL30N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFL30N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFL30N120P, IXFL30N120P Datasheet (Total Pages: 4, Size: 123.82 KB)
PDFIXFL30N120P Datasheet Cover
IXFL30N120P Datasheet Page 2 IXFL30N120P Datasheet Page 3 IXFL30N120P Datasheet Page 4

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IXFL30N120P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 15A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs310nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds19000pF @ 25V
FET Feature-
Power Dissipation (Max)357W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUSi5-Pak™
Package / CaseISOPLUSi5-Pak™

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