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IXFM11N80

IXFM11N80

For Reference Only

Part Number IXFM11N80
PNEDA Part # IXFM11N80
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,772
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFM11N80 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFM11N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXFM11N80 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs155nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4200pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-204AA
Package / CaseTO-204AA, TO-3

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