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IXFN132N50P3

IXFN132N50P3

For Reference Only

Part Number IXFN132N50P3
PNEDA Part # IXFN132N50P3
Description MOSFET N-CH 500V 112A SOT227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,950
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN132N50P3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN132N50P3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN132N50P3, IXFN132N50P3 Datasheet (Total Pages: 6, Size: 168.51 KB)
PDFIXFN132N50P3 Datasheet Cover
IXFN132N50P3 Datasheet Page 2 IXFN132N50P3 Datasheet Page 3 IXFN132N50P3 Datasheet Page 4 IXFN132N50P3 Datasheet Page 5 IXFN132N50P3 Datasheet Page 6

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IXFN132N50P3 Specifications

ManufacturerIXYS
SeriesHiPerFET™, Polar3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs39mOhm @ 66A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds18600pF @ 25V
FET Feature-
Power Dissipation (Max)1500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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