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IXFN150N65X2

IXFN150N65X2

For Reference Only

Part Number IXFN150N65X2
PNEDA Part # IXFN150N65X2
Description MOSFET N-CH 650V 145A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN150N65X2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN150N65X2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN150N65X2, IXFN150N65X2 Datasheet (Total Pages: 5, Size: 127.3 KB)
PDFIXFN150N65X2 Datasheet Cover
IXFN150N65X2 Datasheet Page 2 IXFN150N65X2 Datasheet Page 3 IXFN150N65X2 Datasheet Page 4 IXFN150N65X2 Datasheet Page 5

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IXFN150N65X2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C145A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs17mOhm @ 75A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs355nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds21000pF @ 25V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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