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IXFN180N25T

IXFN180N25T

For Reference Only

Part Number IXFN180N25T
PNEDA Part # IXFN180N25T
Description MOSFET N-CH 250V 168A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,618
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN180N25T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN180N25T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN180N25T, IXFN180N25T Datasheet (Total Pages: 6, Size: 162.95 KB)
PDFIXFN180N25T Datasheet Cover
IXFN180N25T Datasheet Page 2 IXFN180N25T Datasheet Page 3 IXFN180N25T Datasheet Page 4 IXFN180N25T Datasheet Page 5 IXFN180N25T Datasheet Page 6

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IXFN180N25T Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C168A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs345nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds28000pF @ 25V
FET Feature-
Power Dissipation (Max)900W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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