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IXFN200N10P

IXFN200N10P

For Reference Only

Part Number IXFN200N10P
PNEDA Part # IXFN200N10P
Description MOSFET N-CH 100V 200A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,246
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN200N10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN200N10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN200N10P, IXFN200N10P Datasheet (Total Pages: 5, Size: 166.48 KB)
PDFIXFN200N10P Datasheet Cover
IXFN200N10P Datasheet Page 2 IXFN200N10P Datasheet Page 3 IXFN200N10P Datasheet Page 4 IXFN200N10P Datasheet Page 5

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IXFN200N10P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs235nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 25V
FET Feature-
Power Dissipation (Max)680W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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