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IXFN21N100Q

IXFN21N100Q

For Reference Only

Part Number IXFN21N100Q
PNEDA Part # IXFN21N100Q
Description MOSFET N-CH 1000V 21A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,218
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN21N100Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN21N100Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN21N100Q, IXFN21N100Q Datasheet (Total Pages: 4, Size: 146.99 KB)
PDFIXFN21N100Q Datasheet Cover
IXFN21N100Q Datasheet Page 2 IXFN21N100Q Datasheet Page 3 IXFN21N100Q Datasheet Page 4

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IXFN21N100Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5900pF @ 25V
FET Feature-
Power Dissipation (Max)520W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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