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IXFN230N20T

IXFN230N20T

For Reference Only

Part Number IXFN230N20T
PNEDA Part # IXFN230N20T
Description MOSFET N-CH 200V 220A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,032
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 25 - May 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN230N20T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN230N20T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN230N20T, IXFN230N20T Datasheet (Total Pages: 5, Size: 117.58 KB)
PDFIXFN230N20T Datasheet Cover
IXFN230N20T Datasheet Page 2 IXFN230N20T Datasheet Page 3 IXFN230N20T Datasheet Page 4 IXFN230N20T Datasheet Page 5

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IXFN230N20T Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C220A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs378nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds28000pF @ 25V
FET Feature-
Power Dissipation (Max)1090W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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